Researchers at the University of Tokyo have developed a transistor based on indium oxide doped with gallium (InGaOx). In a number of tests, it outperforms traditional silicon analogs in terms of efficiency. The prototype uses a gate-all-around structure, where the control electrode completely surrounds the conductive channel.
Such mechanics allow for much better control over current. Silicon transistors, long the basis of microelectronics, are approaching their physical limits. InGaOx has higher electron mobility (44.5 cm²/Vs) and is more resistant to defects.
Gallium doping suppressed oxygen vacancies in the indium oxide, which reduced the stability of the transistors. The scientists used atomic layer deposition to create a thin layer of InGaOx, which they then heat-treated to form a crystalline structure.
The resulting metal-oxide semiconductor transistor remained operational under load for three hours. This development opens the way to the creation of next-generation electronic components for solving more complex problems, including AI and big data processing.