SK Hynix has unveiled a new generation of UFS 4.1 flash memory chips designed for creating storage devices in modern gadgets, particularly those supporting Artificial Intelligence (AI) functionalities. Utilizing these chips will enable the production of thinner smartphones while simultaneously enhancing key consumer characteristics like performance and power efficiency.
This new UFS 4.1 revision features the world’s first 321-layer 4D NAND TLC (Triple-Level Cell) memory, achieving a density of 1 Terabit (Tbit). These advanced chips consume 7% less power compared to their predecessors, while their thickness has been reduced by 15% – from 1 millimeter (mm) to just 0.85 mm. The declared sequential read speed is a record for this type of memory, reaching 4300 Megabytes per second (MB/s). According to SK Hynix, the random read and write speeds have also seen significant improvements, increasing by 15% and 40%, respectively. These improvements in random access speeds are crucial for applications that frequently access small files, such as AI tasks and multitasking.
These proprietary chips are strategically positioned as an ideal storage solution for slim smartphones and other gadgets equipped with AI features that demand high data transfer speeds and optimal energy efficiency. SK Hynix has already announced drives based on this new standard with capacities of 512 Gigabytes (GB) and 1 Terabyte (TB). Mass shipments of these high-performance storage solutions are planned for the first quarter of 2026. The specific devices that will be among the first to adopt this cutting-edge memory technology remain to be seen, but flagship smartphones from major manufacturers are likely candidates due to their increasing focus on AI capabilities and sleek designs.